A new characterization approach to study the mechanical behavior of silicon nanowires

This work proposes a new approach to characterize the mechanical properties of nanowires based on combination nanomechanical measurements and models. Silicon with critical dimension 90 nm length 8 ?m obtained through monolithic process are characterized in-situ three-point bending tests. A nonlinear model is developed evaluate behavior nanowires. In this model, intrinsic stress surface parameters examined Raman spectroscopy molecular dynamics simulations, respectively. demonstrates measure Si by considering effect stresses. The presented technique can be used address existing discrepancies between numerical estimations experimental modulus elasticity silicon